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Electronic properties of narrow gap IV-VI semiconductors


Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
Fulltext pdf (127 KB)
Fulltext is also available at DOI: 10.1070/PU2003v046n09ABEH001645
PACS: 71.20.Nr, 73.20.−r (all)
DOI: 10.1070/PU2003v046n09ABEH001645
URL: https://ufn.ru/en/articles/2003/9/i/
000188171400009
Citation: Volkov B A "Electronic properties of narrow gap IV-VI semiconductors" Phys. Usp. 46 984–986 (2003)
BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks
PT Journal Article
TI Electronic properties of narrow gap IV – VI semiconductors

AU Volkov B A
FAU Volkov BA
DP 10 Sep, 2003
TA Phys. Usp.
VI 46
IP 9
PG 984-986
RX 10.1070/PU2003v046n09ABEH001645
URL https://ufn.ru/en/articles/2003/9/i/
SO Phys. Usp. 2003 Sep 10;46(9):984-986

Оригинал: Волков Б А «Электронные свойства узкощелевых полупроводников типа IV-VI» УФН 173 1013–1015 (2003); DOI: 10.3367/UFNr.0173.200309j.1013

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